 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BYM 600 A 170 DN2 Diode Power Module Preliminary data * Inside fast free-wheeling diode * Package with insulated metal base plate * Diode especially for brake choppers * matched with BSM 300 GA 170 DN 2 E 3166 Type BYM 600 A 170 DN2 Maximum Ratings Parameter Diode reverse voltage VR25 IFDC Package SINGLE DIODE 1 Ordering Code C67070-A2902-A67 1700V 600A Symbol Values 1700 Unit V A VR25 IFDC 600 400 Tj = 25 C DC current TC = 25 C TC = 80 C Pulsed diode current, tp = 1 ms IFpuls 1200 800 TC = 25 C TC = 80 C i 2t-value, tP = 10 ms Tj = 0 C Power dissipation per diode i 2t 96800 A2s W 1400 + 150 -55 ... + 150 0.09 4000 20 11 F 55 / 150 / 56 Jan-09-1997 sec K/W Vac mm C PD Tj Tstg RthJC Vis 1 TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group BYM 600 A 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Free-Wheel Diodes Diode forward voltage VF 2 1.8 1.1 4.4 2.5 - V IF = 300 A, VGE = 0 V, Tj = 25 C IF = 300 A, VGE = 0 V, Tj = 125 C Reverse current IR 1.6 - mA VCA = 1700 V, Tj = 25 C VCA = 1700 V, Tj = 125 C Reverse recovery time trr 1 - s IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C Tj = 125 C 33 100 - Semiconductor Group 2 Jan-09-1997 BYM 600 A 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1500 W 1300 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W 10 -1 Diode Ptot 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 ZthJC 10 -2 D = 0.50 10 -3 0.20 0.10 0.05 10 -4 0.02 single pulse 0.01 20 40 60 80 100 120 C 160 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 600 A 500 Tj=125C IF Tj=25C 450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 Semiconductor Group 3 Jan-09-1997 BYM 600 A 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 4 Jan-09-1997 |
Price & Availability of BYM600A170DN2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |